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Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser
Zhong-Mei Huang;  Wei-Qi Huang;  Zui-Min Jiang;  Shi-Rong Liu;  Xue-Ke Wu;  Chao-Jian Qin
2017
Source PublicationOptics Letters
Volume42Issue:2Pages:358-361
Abstract

It is found that the optimum annealing temperature is about 1000°C for the infrared emission of defect states at room temperature on black silicon (BS) prepared by using a nanosecond-pulsed laser. In addition, it is observed that the suitable annealing time is 6∼8  min at 1000°C for the emission on the BS. The crystallizing proceeding in annealing on the BS can be used to explain the above annealing effect. It is interesting that the emission band becomes intensive and broader on the BS prepared in oxygen atmosphere than that prepared in vacuum in the analysis of photoluminescence spectra, where the electronic states localized at the defects from D1 to D4 doped with oxygen play an important role in the emission with the broader band which are obviously enhanced in the room temperature.

Language英语
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/8374
Collection环境地球化学国家重点实验室
Affiliation1.Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China
2.State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, China
3.State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003, China
Recommended Citation
GB/T 7714
Zhong-Mei Huang;Wei-Qi Huang;Zui-Min Jiang;Shi-Rong Liu;Xue-Ke Wu;Chao-Jian Qin. Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser[J]. Optics Letters,2017,42(2):358-361.
APA Zhong-Mei Huang;Wei-Qi Huang;Zui-Min Jiang;Shi-Rong Liu;Xue-Ke Wu;Chao-Jian Qin.(2017).Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser.Optics Letters,42(2),358-361.
MLA Zhong-Mei Huang;Wei-Qi Huang;Zui-Min Jiang;Shi-Rong Liu;Xue-Ke Wu;Chao-Jian Qin."Electronic states of defect with impurity and infrared emission on black silicon prepared by an ns-laser".Optics Letters 42.2(2017):358-361.
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