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Enhanced emission in the three-level system of Si and Ge nanostructures
Zhong-Mei Huang;  Wei-Qi Huang;  Shi-Rong Liu;  Tai-Ge Dong;  Gang Wang;  Xue-Ke Wu;  Zhi-Rong Han;  Chao-Jian Qin
2017
Source PublicationOptics Communications
Volume383Pages:1-5
Abstract

Enhanced mission peak near 700 nm is observed on the silicon quantum dots (QDs) embedded in Si amorphous film and the peak near 1100 nm occurs on the silicon nanolayer, which have the emission characteristics of direct band-gap, such as the thresholds effect and the supper-line increasing effect in intensity with pumping in our experiment. It is interesting that the Si QDs embedded in nanosilicon layer are prepared by using pulsed laser deposition (PLD) method after annealing. In the same way, the peak near 900 nm on the Ge QDs and the peak near 1500 nm on the Ge nanolayer are measured in the PL spectra. It is very interesting that the sharper peaks with multi-longitudinal-mode occur in the Si and Ge nanolayers with the super-lattice on SOI in which the QDs are embedded. An emission model for Si and Ge laser on silicon chip with QDs pumping has been provided to explain the experimental results.

KeywordThree-level System Quantum Dots Nanolayers Super-lattice Structure
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.gyig.ac.cn/handle/42920512-1/8373
Collection环境地球化学国家重点实验室
Affiliation1.Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China
2.State key laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, China
3.State Key Laboratory of Environmental Geochemistry Institute of Geochemistry, Chinese Academy of Science Institute of Geochemistry, Guiyang 550003 China
4.School of Mechanical Engineering, Guiyang University, Guiyang 550003, China
Recommended Citation
GB/T 7714
Zhong-Mei Huang;Wei-Qi Huang;Shi-Rong Liu;Tai-Ge Dong;Gang Wang;Xue-Ke Wu;Zhi-Rong Han;Chao-Jian Qin. Enhanced emission in the three-level system of Si and Ge nanostructures[J]. Optics Communications,2017,383:1-5.
APA Zhong-Mei Huang;Wei-Qi Huang;Shi-Rong Liu;Tai-Ge Dong;Gang Wang;Xue-Ke Wu;Zhi-Rong Han;Chao-Jian Qin.(2017).Enhanced emission in the three-level system of Si and Ge nanostructures.Optics Communications,383,1-5.
MLA Zhong-Mei Huang;Wei-Qi Huang;Shi-Rong Liu;Tai-Ge Dong;Gang Wang;Xue-Ke Wu;Zhi-Rong Han;Chao-Jian Qin."Enhanced emission in the three-level system of Si and Ge nanostructures".Optics Communications 383(2017):1-5.
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