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| Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping | |
| Zhidan Zeng; Lin Wang; Xiangyang Ma; Shaoxing Qu; Jiahe Chen; Yonggang Liu; Deren Yang | |
| 2011 | |
| Source Publication | Scripta Materialia
 |
| Volume | 64Issue:9Pages:832–835 |
| Abstract | The mechanical properties of germanium-doped Czochralski (GCz) silicon have been investigated using instrumented nanoindentation combined with an ultrasonic pulse-echo overlap technique. The GCz silicon samples showed higher Young’s modulus and hardness than germanium-free Czochralski silicon samples in nanoindentation tests. We believe this was caused by the enhanced phase transition from the Si-I phase to the stiffer Si-II phase in GCz silicon under contact load during indentation. This scenario was further confirmed by micro-Raman spectroscopy measurements. |
| Keyword | Silicon Nanoindentation Phase Transformation Raman Spectroscopy Germanium Doping |
| Indexed By | SCI |
| Language | 英语 |
| Document Type | 期刊论文 |
| Identifier | http://ir.gyig.ac.cn/handle/42920512-1/9498 |
| Collection | 地球内部物质高温高压实验室 |
| Affiliation | 1.State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China 2.High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, IL 60439, USA 3.State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People’s Republic of China 4.Institute of Applied Mechanics,School of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, People’s Republic of China 5.Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002, People’s Republic of China |
| Recommended Citation GB/T 7714 | Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang. Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping[J]. Scripta Materialia,2011,64(9):832–835. |
| APA | Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang.(2011).Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping.Scripta Materialia,64(9),832–835. |
| MLA | Zhidan Zeng;Lin Wang;Xiangyang Ma;Shaoxing Qu; Jiahe Chen;Yonggang Liu;Deren Yang."Improvement in the mechanical performance of Czochralski silicon under indentation by germanium doping".Scripta Materialia 64.9(2011):832–835. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Improvement in the m（197KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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